We are looking forward to hearing from you!

「SOI silicon wafer」

SOI wafers with high resistivity device layers and substrates are available.

Diameter: 3 inch to 12 inch
Device layer: around 2-200 um (Resistivity above 10,000 ohm-cm is available.)
SiO2 layer: around 0.5-2 um (0.1-10um is available upon request.)
Substrate: around 300-725 um (Resistivity above 10,000 ohm-cm is available.)

* Min. order quantity for custom made SOI is about 10 pcs, depending on the requirements..

＊ We can make SOI wafers using supplied wafers of yours (up to 8 inch).

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